A team of researchers at Aalto University in Finland has developed a new type of infrared photodiode that is 35 percent more sensitive than other currently used germanium-based applications. This breakthrough offers a more sustainable and efficient alternative to the commonly used InGaAs material, which is toxic and not CMOS compatible.
Most infrared photodiodes are made of InGaAs, a material that is neither CMOS compatible nor good for the environment. This material is toxic and can contaminate soil and water if not disposed of carefully. It is also a known carcinogen, so exposure to arsenic during production can pose serious health risks. Aalto University researchers have developed a photodiode that is 35 percent more sensitive than other currently used germanium-based applications.
This advancement promises to make infrared devices better, more affordable, and more efficient than ever before.Researchers have been looking for an alternative to InGaAs. Germanium combines the good features of both InGaAs and quantum dots and is CMOS compatible. However, the reason researchers haven't used this material as the primary photodiode material is that it failed to capture a major chunk of infrared light it received. Surprisingly, the Aalto team managed to overcome this limitation
Infrared Photodiode Ingaas Germanium Aalto University Sustainability
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